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| APTGT100DU120TG Dual common source Fast Trench + Field Stop IGBT(R) Power Module C1 Q1 G1 C2 VCES = 1200V IC = 100A @ Tc = 80C Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies Q2 G2 E1 E2 NTC1 E NTC2 Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant Max ratings 1200 140 100 200 20 480 200A @ 1100V Unit V A V W July, 2006 1-5 APTGT100DU120TG - Rev 1 G2 E2 C2 C1 E C2 E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT100DU120TG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 100A Tj = 125C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit A V V nA Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 100A R G = 3.9 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 100A R G = 3.9 VGE = 15V Tj = 125C VBus = 600V IC = 100A Tj = 125C R G = 3.9 Min Typ 7200 400 300 260 30 420 70 290 50 520 90 10 Max Unit pF ns ns mJ 10 Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Test Conditions VR=1200V IF = 100A VGE = 0V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C IF = 100A VR = 600V di/dt =2000A/s Min 1200 Typ Max 250 500 Unit V A A 100 1.6 1.6 170 280 9 18 5 9 2.1 V ns July, 2006 2-5 APTGT100DU120TG - Rev 1 Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C C mJ www.microsemi.com APTGT100DU120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.26 0.48 150 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 2500 -40 -40 -40 2.5 SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT100DU120TG - Rev 1 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : July, 2006 APTGT100DU120TG Typical Performance Curve 200 Output Characteristics (VGE =15V) Output Characteristics 200 T J = 125C TJ=125C 150 IC (A) TJ=25C 150 IC (A) VGE=17V VGE =13V VGE =15V 100 100 VGE=9V 50 50 0 0 1 2 VCE (V) 3 4 0 0 1 2 VCE (V) 3 4 200 175 150 Transfert Characteristics TJ=25C TJ=125C 25 20 E (mJ) 15 10 5 0 Energy losses vs Collector Current VCE = 600V VGE = 15V R G = 3.9 TJ = 125C Eon Eoff Er Eon 125 IC (A) 100 75 50 25 0 5 6 7 8 9 TJ=125C 10 11 12 0 25 50 75 100 125 150 175 200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance 25 20 E (mJ) 15 10 5 0 0 5 10 15 20 Gate Resistance (ohms) 25 VCE = 600V VGE =15V I C = 100A TJ = 125C Eoff Er Eon Reverse Bias Safe Operating Area 240 200 160 IC (A) 120 80 40 0 0 300 600 900 VCE (V) 1200 1500 VGE =15V TJ =125C R G=3.9 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W) IGBT 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT100DU120TG - Rev 1 July, 2006 APTGT100DU120TG Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40 ZCS ZVS VCE=600V D=50% RG =3.9 TJ=125C Tc=75C Forward Characteristic of diode 200 T J=25C 150 IF (A) 30 20 100 TJ =125C 50 10 0 0 20 40 60 80 IC (A) 100 120 140 Hard switching TJ =125C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.9 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse Diode 0 0.00001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT100DU120TG - Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein July, 2006 |
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